TI (Texas Instruments) 2N6801 Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: WIRE Terminal Finish: TIN LEAD Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: METAL Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 2.5 A DS Breakdown Voltage-Min: 450 V Drain-source On Resistance-Max: 1.5 ohm Pulsed Drain Current-Max (IDM): 11 A